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Far infrared modulated photoluminescence in InSb quantum dots


Reference:

Child, R.A., Nicholas, R.J., Mason, N.J., Shields, P., Wells, J.-P.R., Bradley, I.V., Phillips, J. and Murdin, B.N., 2004. Far infrared modulated photoluminescence in InSb quantum dots. Physica E: Low-dimensional Systems and Nanostructures, 22 (1-3), pp. 598-602.

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Official URL:

http://dx.doi.org/10.1016/j.physe.2003.12.079

Abstract

The first FIRM-PL measurements in InSb/GaSb quantum dots have been performed. At low power densities the FIR absorption causes a transfer of carriers between dots and effectively cools the system, preferentially populating large, low energy dots and increasing the photoluminescence (PL) intensity. At higher powers the carrier temperature increases and the PL intensity falls. The spectral dependence of the FIRM-PL signal measures the energy spectrum of the quantum dots, showing a peak at 14.5 meV corresponding to transitions between the first two energy levels of the quantum dot distribution.

Details

Item Type Articles
CreatorsChild, R.A., Nicholas, R.J., Mason, N.J., Shields, P., Wells, J.-P.R., Bradley, I.V., Phillips, J. and Murdin, B.N.
DOI10.1016/j.physe.2003.12.079
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30630

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