InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
Tyan, S.L., Lin, Y.G., Tsai, F.Y., Lee, C.P., Shields, P.A. and Nicholas, R.J., 2001. InGaAs/GaAs quantum wells and quantum dots on (111)B orientation. Solid State Communications, 117 (11), pp. 649-654.
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We report a magneto optical characterization of InGaAs/GaAs quantum well (QW) and quantum dot (QD) structures grown on (111)B GaAs substrates. The photoluminescence (PL) peak shift under high excitation intensity is used to distinguish QW from QD structures together with atomic force microscopy (AFM) imaging. The binding energy in (111)InGaAs/GaAs QW is about 5 meV. The extent of the wave function obtained from the diamagnetic shift of the PL peak energy is consistent with the result calculated by the k.p method. The InGaAs/GaAs QD lateral confinement energy and the dot size are also estimated from the diamagnetic shift of the PL lines. The lateral confinement energy is estimated as 7 meV. The mean radius of the InGaAs QD is about 14 nm and the dot height is about 6 nm, which is in good agreement with the results as revealed in AFM imaging.
|Creators||Tyan, S.L., Lin, Y.G., Tsai, F.Y., Lee, C.P., Shields, P.A. and Nicholas, R.J.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
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