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Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems


Reference:

Nicholas, R.J., Shields, P.A., Child, R.A., Li, L.J., Alphandéry, E., Mason, N.J. and Bumby, C., 2004. Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems. Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4), pp. 204-210.

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Official URL:

http://dx.doi.org/10.1016/j.physe.2003.08.004

Abstract

The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.

Details

Item Type Articles
CreatorsNicholas, R.J., Shields, P.A., Child, R.A., Li, L.J., Alphandéry, E., Mason, N.J. and Bumby, C.
DOI10.1016/j.physe.2003.08.004
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30638
Additional InformationProceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003

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