Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
Reference:
Nicholas, R.J., Shields, P.A., Child, R.A., Li, L.J., Alphandéry, E., Mason, N.J. and Bumby, C., 2004. Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems. Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4), pp. 204-210.
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below.
Official URL:
http://dx.doi.org/10.1016/j.physe.2003.08.004
Abstract
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm.
Details
| Item Type | Articles |
| Creators | Nicholas, R.J., Shields, P.A., Child, R.A., Li, L.J., Alphandéry, E., Mason, N.J. and Bumby, C. |
| DOI | 10.1016/j.physe.2003.08.004 |
| Departments | Faculty of Engineering & Design > Electronic & Electrical Engineering |
| Refereed | Yes |
| Status | Published |
| ID Code | 30638 |
| Additional Information | Proceedings of the 11th International Conference on Narrow Gap; Buffalo, NY.; 16-20 June 2003 |
Export
Actions (login required)
| View Item |
