Magneto-reflectivity of gallium nitride epilayers


Shields, P.A., Nicholas, R.J., Beaumont, B. and Gibart, P., 1999. Magneto-reflectivity of gallium nitride epilayers. Physica Status Solidi (B), 216 (1), pp. 17-20.

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We have used interband magneto-reflectivity to study the band parameters of wurtzite GaN epilayers grown on sapphire. Using magnetic fields up to 57 T, we have observed a series of up to ten magneto-excitonic transitions for the first time. The levels can be fitted with two intersecting magneto-excitonic fans coming from the A and B valence band edges with reduced masses of (0.195 ± 0.01) m0 and (0.180 ± 0.003) m0 respectively. The field dependence of the A-exciton 1s and 2p states gives a reduced mass of (0.180 ± 0.005) m0, and (0.193 ± 0.005) m0 is found with the B-exciton 1s state. The B exciton shows a clear spin splitting at 57 T, whereas no splitting of the A exciton is observed.


Item Type Articles
CreatorsShields, P.A., Nicholas, R.J., Beaumont, B. and Gibart, P.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
ID Code30640


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