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Mid-infrared luminescence from coupled quantum dots and wells


Reference:

Shields, P.A., Li, L.J. and Nicholas, R.J., 2004. Mid-infrared luminescence from coupled quantum dots and wells. Physica E: Low-dimensional Systems and Nanostructures, 21 (2-4), pp. 341-344.

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Official URL:

http://dx.doi.org/10.1016/j.physe.2003.11.042

Abstract

Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.

Details

Item Type Articles
CreatorsShields, P.A., Li, L.J. and Nicholas, R.J.
DOI10.1016/j.physe.2003.11.042
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code30641

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