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Production of single-crystal semiconductor material using a nanostructure template


Reference:

Wang, W.-N., 2008. Production of single-crystal semiconductor material using a nanostructure template. C30B29/38-TW200839041 (A), 01 October 2008.

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Abstract

A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to from a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

Details

Item Type Patent
CreatorsWang, W.-N.
Uncontrolled Keywords38
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code30699

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