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Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials


Reference:

Wang, W.-N., 2008. Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials. C30B25/18-TW200801257 (A), 01 January 2008.

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Abstract

A method utilizes HVPE to grow high quality flat and thick compound semiconductors 15 onto foreign substrates 10 using nanostructure compliant layers. Nanostructures 12 of semiconductor materials can be grown on foreign substrates 10 by molecular beam epitaxy (MBE), chemical vapour deposition (CVD), metalorganic chemical vapour deposition (MOCVD) and hydride vapour phase epitaxy (HVPE). Further growth of continuous compound semiconductor thick films 15 or wafer is achieved by epitaxial lateral overgrowth using HVPE.

Details

Item Type Patent
CreatorsWang, W.-N.
Uncontrolled Keywords18
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code30715

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