GaN epitaxial layer over growth method


Wang, W.-N., 2008. GaN epitaxial layer over growth method. H01L21/20-GB2446471 (A), 13 August 2008.

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Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.


Item Type Patent
CreatorsWang, W.-N.
Uncontrolled Keywords20
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
ID Code30767


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