Research

GaN epitaxial layer over growth method


Reference:

Wang, W.-N., 2008. GaN epitaxial layer over growth method. H01L21/20-GB2446471 (A), 13 August 2008.

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Abstract

Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.

Details

Item Type Patent
CreatorsWang, W.-N.
Uncontrolled Keywords20
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code30767

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