GaN epitaxial layer over growth method
Wang, W.-N., 2008. GaN epitaxial layer over growth method. H01L21/20- GB2446471 (A), 13 August 2008.
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Nanostructures formed on a surface of a substrate are used as nucleation sites for epitaxial overgrowth of bulk gallium nitride semiconductor crystals including device layers. Nanocolumn nucleation sites are formed using a nanostructured mask on the substrate by etching the substrate or by selective area growth in the mask openings. The epitaxial growth method is used for fabricating gallium nitride optoelectronic devices.
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
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