Rocking disc electro-deposition of CuIn alloys, selenisation, and pinhole effect minimisation in CISe solar absorber layers
Cummings, C.Y., Zoppi, G., Forbes, I., Colombara, D., Peter, L.M. and Marken, F., 2012. Rocking disc electro-deposition of CuIn alloys, selenisation, and pinhole effect minimisation in CISe solar absorber layers. Electrochimica Acta, 79, pp. 141-147.
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The co-electrodeposition of copper and indium from a pH 3 tartrate bath onto 4.8 cm × 2.5 cm Mo and MoSe 2 substrates is studied and conditions are optimised for CuIn alloy films. Selenisation at ca. 500 °C for 30 min in selenium vapour gives CuInSe 2 (or CISe). Mapping using the photo-electrochemical reduction of Eu(NO 3) 3 is used to asses the relative photoactivity as a function of position and surface treatment. Etching of detrimental Cu x Se phases is investigated with 5% and 0.5% (w/w) aqueous KCN. The slower 0.5% (w/w) KCN etch allows better process control, and re-annealing at 500 °C for 30 min followed by further etching significantly improved the photo-activity. However, over the large area local pinhole recombination effects are substantial. An alternative low temperature film optimisation method is proposed based on (i) KCN over-etch, (ii) hypochlorite (5%, w/w) pinhole removal (Mo etch), and (iii) a final KCN etch to give good and more uniform activity.
|Creators||Cummings, C.Y., Zoppi, G., Forbes, I., Colombara, D., Peter, L.M. and Marken, F.|
|Departments||Faculty of Science > Chemistry|
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