Integrated Schottky structures for applications above 100 GHz

Reference:

Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J. V., Davies, S. R. and Narhi, T., 2008. Integrated Schottky structures for applications above 100 GHz. In: European Microwave Integrated Circuit Conference: EuMIC 2008. IEEE, pp. 202-205.

Related documents:

Official URL:

http://dx.doi.org/10.1109/EMICC.2008.4772264

Abstract

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

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