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Integrated Schottky structures for applications above 100 GHz


Reference:

Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J. V., Davies, S. R. and Narhi, T., 2008. Integrated Schottky structures for applications above 100 GHz. In: 38th European Microwave Conference, 2008-10-27 - 2008-10-31. IEEE, pp. 202-205.

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http://dx.doi.org/10.1109/EMICC.2008.4772264

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Abstract

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.

Details

Item Type Conference or Workshop Items (UNSPECIFIED)
CreatorsAlderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Wang, H., Treuttel, J., Siles, J. V., Davies, S. R. and Narhi, T.
DOI10.1109/EMICC.2008.4772264
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URLURL Type
http://www.scopus.com/inward/record.url?scp=66649101853&partnerID=8YFLogxKUNSPECIFIED
DepartmentsFaculty of Science > Physics
StatusPublished
ID Code32288

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