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Optical property changes in low- k films upon ultraviolet-assisted curing


Reference:

Eslava, S., Eymery, G., Marsik, P., Iacopi, F., Kirschhock, C.E.A., Maex, K., Martens, J.A. and Baklanov, M.R., 2008. Optical property changes in low- k films upon ultraviolet-assisted curing. Journal of the Electrochemical Society, 155 (5).

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Official URL:

http://dx.doi.org/10.1149/1.2885041

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Abstract

Ultraviolet-assisted curing (UV curing) has been applied recently to enhance the mechanical properties of low- k films. Knowledge about which UV energies are most effective is still limited and the consequences of applying the UV-curing process to integrated stacks in on-chip interconnects are unknown. To clarify these open questions, we investigated the optical properties of a SiCOH low- k layer by purged UV spectroscopic ellipsometry in the energy region 2-9 eV. The complex refractive index of the low- k film shows an absorption edge with a superimposed absorption band at 6.4 eV that vanishes upon UV-assisted curing. A comparison with Fourier transform infrared transmission demonstrates that the absorption at 6.4 eV must be attributed to the organic porogens, which also influence the absorption edge. Further analysis reveals the redshift of the absorption edge of silica-based low- k films with the presence of carbon species. The measured optical properties permit simulation of the standing wave pattern of light within the films in differently configured stacks.

Details

Item Type Articles
CreatorsEslava, S., Eymery, G., Marsik, P., Iacopi, F., Kirschhock, C.E.A., Maex, K., Martens, J.A. and Baklanov, M.R.
DOI10.1149/1.2885041
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URLURL Type
http://www.scopus.com/inward/record.url?scp=41849109552&partnerID=8YFLogxKUNSPECIFIED
DepartmentsFaculty of Engineering & Design > Chemical Engineering
RefereedYes
StatusPublished
ID Code41028

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