Defect and dopant properties of the SrCeO3-based proton conductor


Mather, G. C. and Islam, M. S., 2005. Defect and dopant properties of the SrCeO3-based proton conductor. Chemistry of Materials, 17 (7), pp. 1736-1744.

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Atomic-scale studies using advanced simulation techniques have investigated the energetics of defects, oxygen migration, and dopant incorporation in the proton-conducting SrCeO3 system. The interatomic potential model first reproduces the observed distorted perovskite structure of SrCeO3, Substitution with trivalent dopants (M) on the A site in SrCe(Yb)O3-delta (via V-o(..) consumption) is compared with substitution on the B site (via V-o(..) creation); the results support the premise that the absence of ionic conductivity at low doping levels is associated with dopant partitioning over both A and B sites. Dopant-vacancy association is predicted to occur in SrCe0.9M0.1O2.95 for a wide range of M cations. Formation of (M'(Ce)-OHo.) clusters is also calculated to be favorable in accordance with reported proton-trapping effects. The lowest M'(Ce)-OHo. binding energies and the largest M-H distances are found for the most common dopants for proton conductivity in the SrCeO3 system, namely, Y and Yb. The pathway for oxygen migration is proposed as a curved trajectory with an asymmetric energy distribution. The lowest energy redox process is calculated to be oxidation with the formation of holes in accordance with the observation of p-type conductivity at increasing oxygen partial pressures (pO(2)).


Item Type Articles
CreatorsMather, G. C.and Islam, M. S.
DepartmentsFaculty of Science > Chemistry
ID Code4782
Additional InformationID number: ISI:000228106700018


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