Deposition of antimony and antimony oxides by MOCVD

Reference:

Myers, C. P., Haycock, P. W., Pichot, M., Horley, G. A., Molloy, K. C., Rushworth, S. A. and Smith, L. M., 2004. Deposition of antimony and antimony oxides by MOCVD. Chemical Vapor Deposition, 10 (1), pp. 35-44.

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Abstract

Thin films of antimony and antimony oxides have been deposited by metal-organic (MO) CVD from a variety of metal-organic precursors at temperatures in the range 150-650 degreesC under both atmospheric and reduced pressure. Below 400 degreesC, uniform films of pure senarmontite (Sb2O3) with a microstructure and crystal texture that was strongly dependent on the deposition temperature, were deposited. Above 400degreesC, mixed phase material was produced, with isolated crystallites of pure antimony becoming the dominant phase as the temperature was increased. The maximum temperature at which pure senarmontite could be formed was higher for larger precursor ligands. Addition of oxygen to the precursor flow led to the production of higher antimony oxidation states.

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