Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses

Reference:

Cass, M. J., Duffy, N. W., Peter, L. M., Pennock, S. R., Ushiroda, S. and Walker, A. B., 2003. Microwave reflectance studies of photoelectrochemical kinetics at semiconductor electrodes. 1. Steady-state, transient, and periodic responses. Journal of Physical Chemistry B, 107 (24), pp. 5857-5863.

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Abstract

Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor I electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.

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