Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors
Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S. and Parkin, I. P., 2001. Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors. Journal of Materials Chemistry, 11 (2), pp. 469-473.
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Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.
|Creators||Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S. and Parkin, I. P.|
|Departments||Faculty of Science > Chemistry|
|Additional Information||ID number: ISI:000167139700040|
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