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Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors


Reference:

Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S. and Parkin, I. P., 2001. Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors. Journal of Materials Chemistry, 11 (2), pp. 469-473.

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Abstract

Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesised and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmospheric pressure chemical vapour deposition) conditions. H2S is, however, required as co-reactant. Films deposited at 300-400 degreesC are composed of sulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are sulfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also reported.

Details

Item Type Articles
CreatorsHibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S. and Parkin, I. P.
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code5215
Additional InformationID number: ISI:000167139700040

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