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Designing precursors for the deposition of tin sulphide thin films


Reference:

Hibbert, T. G., Kana, A. T., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P. and Venter, M. M., 2001. Designing precursors for the deposition of tin sulphide thin films. Main Group Metal Chemistry, 24 (9), pp. 633-636.

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Abstract

This paper reviews the work carried out by the authors over the last three years on the deposition of tin sulphide films. Particular emphasis is placed on the design and limitations of single-source precursors for these films. Simple homoleptic thiolates Sn(SR)(4) only generate tin sulphides in combination with H2S, otherwise Sn3O4 is produced by in situ formation of Sn(0) and subsequent oxidation. This problem is overcome by the use of chelating dithiolates. The decomposition of mixed ligand (RS)(2)Sn(S2CNEt2)(2) are also described, as are the synthesis and structures of mixed metal thiolates (Ph3PP)AuSSnCy3 and PhHgSSnCy3, potential precursors for ternary tin-containing sulphides.

Details

Item Type Articles
CreatorsHibbert, T. G., Kana, A. T., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P. and Venter, M. M.
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code5216
Additional InformationID number: ISI:000171855000010

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