Deposition of tin sulfide thin films from tin(IV) thiolate precursors
Barone, G., Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P., Hardy, A. M. E. and Field, M. N., 2001. Deposition of tin sulfide thin films from tin(IV) thiolate precursors. Journal of Materials Chemistry, 11 (2), pp. 464-468.
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AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.
|Creators||Barone, G., Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P., Hardy, A. M. E. and Field, M. N.|
|Departments||Faculty of Science > Chemistry|
|Additional Information||ID number: ISI:000167139700039|
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