Research

Deposition of tin sulfide thin films from tin(IV) thiolate precursors


Reference:

Barone, G., Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P., Hardy, A. M. E. and Field, M. N., 2001. Deposition of tin sulfide thin films from tin(IV) thiolate precursors. Journal of Materials Chemistry, 11 (2), pp. 464-468.

Related documents:

This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.

Abstract

AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.

Details

Item Type Articles
CreatorsBarone, G., Hibbert, T. G., Mahon, M. F., Molloy, K. C., Price, L. S., Parkin, I. P., Hardy, A. M. E. and Field, M. N.
DepartmentsFaculty of Science > Chemistry
RefereedYes
StatusPublished
ID Code5251
Additional InformationID number: ISI:000167139700039

Export

Actions (login required)

View Item