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Electroforming process in metal-oxide-polymer resistive switching memories


Reference:

Chen, Q., Gomes, H. L., Kiazadeh, A., Rocha, P. R. F., De Leeuw, D. M. and Meskers, S. C. J., 2012. Electroforming process in metal-oxide-polymer resistive switching memories. In: 3rd IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012, 2012-02-27 - 2012-02-29. (IFIP Advances in Information and Communication Technology; 372 AICT)

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Abstract

Electroforming of an Al/Al 2O 3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10 17 /cm 2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics. © 2012 IFIP International Federation for Information Processing.

Details

Item Type Conference or Workshop Items (UNSPECIFIED)
CreatorsChen, Q., Gomes, H. L., Kiazadeh, A., Rocha, P. R. F., De Leeuw, D. M. and Meskers, S. C. J.
DOI10.1007/978-3-642-28255-3_58
Related URLs
URLURL Type
http://www.scopus.com/inward/record.url?scp=84862876024&partnerID=8YFLogxKUNSPECIFIED
Uncontrolled Keywordselectroforming softbreakdown,non-volatile memory,resistive random access memory (rram),information systems and management
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
Research CentresCentre for Advanced Sensor Technologies (CAST)
StatusPublished
ID Code53364

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