Research

Modelling Intersubband Electroabsorption Modulation


Reference:

Wong, K. M. and Allsopp, D. W. E., 2007. Modelling Intersubband Electroabsorption Modulation. In: Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007), 2007-05-06 - 2007-05-11, Baltimore, MD.

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Abstract

This paper describes a study of the scope for using intersubband transitions as a basis for electroabsorption modulation of 1550 nm wavelength light. Intersubband absorption (ISBA) in the 1550 nm wavelength range in deep modulation doped In0.53Ga0.47As/AlAs quantum wells (QWs) is shown to be sufficiently strong to achieve an acceptable modulation depth of the optical carrier in a long waveguide device. The absorption strength decreases rapidly and almost linearly with increasing applied field strength, desirable attributes for a waveguide electroabsorption modulator.

Details

Item Type Conference or Workshop Items (Paper)
CreatorsWong, K. M.and Allsopp, D. W. E.
Uncontrolled Keywordsaluminium compounds, electroabsorption, iii-v semiconductors, optical waveguides, electro-optical modulation, gallium arsenide, quantum well devices, indium compounds
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedNo
StatusPublished
ID Code5682

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