Modelling Intersubband Electroabsorption Modulation
Wong, K. M. and Allsopp, D. W. E., 2007. Modelling Intersubband Electroabsorption Modulation. In: Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2007), 2007-05-06 - 2007-05-11, Baltimore, MD.
Related documents:This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.
This paper describes a study of the scope for using intersubband transitions as a basis for electroabsorption modulation of 1550 nm wavelength light. Intersubband absorption (ISBA) in the 1550 nm wavelength range in deep modulation doped In0.53Ga0.47As/AlAs quantum wells (QWs) is shown to be sufficiently strong to achieve an acceptable modulation depth of the optical carrier in a long waveguide device. The absorption strength decreases rapidly and almost linearly with increasing applied field strength, desirable attributes for a waveguide electroabsorption modulator.
|Item Type||Conference or Workshop Items (Paper)|
|Creators||Wong, K. M.and Allsopp, D. W. E.|
|Uncontrolled Keywords||aluminium compounds,electroabsorption,iii-v semiconductors,optical waveguides,electro-optical modulation,gallium arsenide,quantum well devices,indium compounds|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Actions (login required)