Series connecting devices for high-voltage power conversion
Robinson, F. V. and Hamidi, V., 2007. Series connecting devices for high-voltage power conversion. In: Universities Power Engineering Conference, 2007. UPEC 2007. 42nd International, 2007-01-01.
Related documents:This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.
Novel dynamic voltage-sharing schemes have been developed to allow any high-voltage power-semiconductor device, e.g. thyristor, IGCT, IGBT or power MOSFET, to be series-connected in strings, and switched as simply and rapidly in high-voltage applications as single devices. The circuits have many of the advantages of simply using RC or RCD snubbers, including being easily applicable to both low- and high-side switches. However, because the snubber capacitors are not fully discharged their associated reset current and power-losses are minimized. To illustrate the principle of operation experimentally, a string of three series-connected power MOSFETs switching 100 A from 330 V has been used to obtain practical waveforms. The schemes are discussed and illustrated, using SPICE simulation results. The new, relatively simple voltage-sharing schemes are much easier to design and optimize than recently reported active gate-control and regenerative-snubber methods, allow very rapid turn-on and turn-off switching, and give composite- device switches a usable voltage rating similar to the aggregated voltage ratings of the string.
|Item Type||Conference or Workshop Items (Paper)|
|Creators||Robinson, F. V.and Hamidi, V.|
|Uncontrolled Keywords||power conversion, dynamic voltage-sharing schemes, power capacitors, series connecting devices, power mosfet, snubbers, high-side switches, voltage balancing, turn-off switching, series connected igbt, active gate-control, voltage sharing, voltage-sharing schemes, rcd snubbers, series-connected power mosfet, series connection, regenerative-snubber methods, turn-on switching, high-voltage power conversion, high-voltage power-semiconductor device, snubber capacitors, series connected igct|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Actions (login required)