Robinson, F. V. and Hamidi, V., 2007. Series connecting devices for high-voltage power conversion. In: Universities Power Engineering Conference, 2007. UPEC 2007. 42nd International, 2007-01-01.
Novel dynamic voltage-sharing schemes have been developed to allow any high-voltage power-semiconductor device, e.g. thyristor, IGCT, IGBT or power MOSFET, to be series-connected in strings, and switched as simply and rapidly in high-voltage applications as single devices. The circuits have many of the advantages of simply using RC or RCD snubbers, including being easily applicable to both low- and high-side switches. However, because the snubber capacitors are not fully discharged their associated reset current and power-losses are minimized. To illustrate the principle of operation experimentally, a string of three series-connected power MOSFETs switching 100 A from 330 V has been used to obtain practical waveforms. The schemes are discussed and illustrated, using SPICE simulation results. The new, relatively simple voltage-sharing schemes are much easier to design and optimize than recently reported active gate-control and regenerative-snubber methods, allow very rapid turn-on and turn-off switching, and give composite- device switches a usable voltage rating similar to the aggregated voltage ratings of the string.
|Item Type ||Conference or Workshop Items (Paper)|
|Creators||Robinson, F. V.and Hamidi, V.|
|Uncontrolled Keywords||power conversion,dynamic voltage-sharing schemes,power capacitors,series connecting devices,power mosfet,snubbers,high-side switches,voltage balancing,turn-off switching,series connected igbt,active gate-control,voltage sharing,voltage-sharing schemes,rcd snubbers,series-connected power mosfet,series connection,regenerative-snubber methods,turn-on switching,high-voltage power conversion,high-voltage power-semiconductor device,snubber capacitors,series connected igct|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
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