Voltage sharing scheme for series-connected power semiconductors


Robinson, F., 2007. Voltage sharing scheme for series-connected power semiconductors. In: 20th IET symposium on pulsed power 2007, 2007-01-01.

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    Dynamic voltage-sharing schemes have been investigated which allow high-voltage power-semiconductor devices, such as thyristors, IGCTs, IGBTs or power MOSFETs, to be series connected in strings and switched, as simply in high-voltage applications, as when used as single devices. The circuits have many of the advantages of simply using RC or RCD snubbers, including being easily applicable to both low- and high-side switches. However, because the snubber capacitors are not fully discharged their associated reset current and power-losses are minimized. To illustrate the principle of operation experimentally, a string of three series-connected power MOSFETs switching 100 A from 330 V has been used to obtain practical waveforms. The schemes are discussed and illustrated, using SPICE simulation results. The new, relatively simple voltage-sharing schemes are much easier to design and optimize than recently reported active gate-control and regenerative-snubber methods, allow very rapid turn-on and turn-off switching, and give composite-device switches a usable voltage rating similar to the aggregated voltage ratings of the string.


    Item Type Conference or Workshop Items (Paper)
    CreatorsRobinson, F.
    Uncontrolled Keywordsvoltage sharing, voltage balancing, series connected igbt, series connected igct, series connection.
    DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
    ID Code5704


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