Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy
Liu, C., Shields, P. A., Denchitcharoen, S., Stepanov, S., Gott, A. and Wang, W. N., 2007. Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy. Journal of Crystal Growth, 300 (1), pp. 104-109.
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A mixed pulsed and normal GaN epitaxial lateral overgrowth (ELO-GaN) by epitaxy metalorganic vapour phase epitaxy (MOVPE) is reported in this study. Monitoring by using an in situ spectroscopic reflectometer has shown that a varying vertical growth rate during the pulsed growth was observed as in the normal ELO-GaN growth process, however, the growth rate was dramatically reduced in pulsed growth. Cross-section scanning electron microscope (SEM) images have shown that a lateral to vertical growth ratio (LTVGR) of 7 was obtained under a set of growth conditions on a template with a GaN trench and SiO2 mask width of 5 and 15 mu m, respectively, and with the stripes aligned in the GaN < 1 1 0 0 > crystallographic direction. Two types of growth instability associated with pulsed growth were observed under some growth conditions-One, is the formation of large steps on the ELO-GaN stripes before coalescence; the other is the,formation of hexagonal pyramids on the coalesced surface. The origin of pyramidal formation was found exactly on the coalescence boundaries. A mixed pulsed and normal ELO-GaN growth technique has been established to eliminate the large steps, and formation of pyramids can be avoided by switching to normal growth conditions before ELO-GaN stripes coalesce. The thickness of ELO-GaN has been successfully controlled below 1 mu m before coalescence, and below 3 mu m for a fully coalesced ELO-GaN film by this technique. Atomic force microscope (AFM) has confirmed that ELO-GaN films grown by this technique are of high structural quality. (c) 2006 Elsevier B.V. All rights reserved.
|Creators||Liu, C., Shields, P. A., Denchitcharoen, S., Stepanov, S., Gott, A. and Wang, W. N.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Faculty of Engineering & Design > Mechanical Engineering
|Additional Information||ID number: ISIP:000245368700021|
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