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In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry


Reference:

Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry. Applied Physics Letters, 88 (10).

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Official URL:

http://dx.doi.org/10.1063/1.2182013

Abstract

The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and lateral growth rates and hence thickness and wing width of the growing GaN are extracted. A vertical growth enhancement was clearly observed at an early stage, followed by vertical growth suppression until full coalescence was achieved. The lateral to vertical growth ratio was obtained showing clear time dependent characteristics. The observations were explained by considering the mass transport between the growing (0001) facets and the {11 (2) over bar0} sidewall facets. (c) 2006 American Institute of Physics.

Details

Item Type Articles
CreatorsLiu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T.
DOI10.1063/1.2182013
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
Faculty of Engineering & Design > Mechanical Engineering
RefereedYes
StatusPublished
ID Code5801
Additional InformationID number: ISI:000235905800003

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