High temperature refractive indices of GaN

Reference:

Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. High temperature refractive indices of GaN. In: Hildebrandt, S. and Stutzmann, M., eds. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 6. Vol. 3. , pp. 1884-1887. (Physica Status Solidi C-Current Topics in Solid State Physics)

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Abstract

Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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