High temperature refractive indices of GaN
Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. High temperature refractive indices of GaN. (Physica Status Solidi C-Current Topics in Solid State Physics)
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Undoped GaN (u-GaN) films were grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire substrates. In situ optical monitoring was applied to the growth process either using a LayTec EpiR-DA TT spectroscopic reflectometer or Filmetrics F30. Refractive indices of u-GaN films at 1060 degrees C were obtained in a spectral range from 370-900 nm. A peak at 412 5 rim in refractive index spectra was observed, which most likely corresponds to the band-gap of hexagonal GaN at a temperature of 1060 degrees C. Refractive indices below this band-gap are fitted well to the first-order Sellmeier formula. As an example of the applications of the refractive indices, the effective film thicknesses of GaN during the resumption from 3 dimensional (3D) to 2 dimensional (2D) growth have been calculated from the spectra recorded by a LayTec system using the optical constants obtained. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|Item Type||Conference or Workshop Items (UNSPECIFIED)|
|Creators||Liu, C., Stepanov, S., Gott, A., Shields, P. A., Zhirnov, E., Wang, W. N., Steimetz, E. and Zettler, J. T.|
|Editors||Hildebrandt, S.and Stutzmann, M.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
Faculty of Engineering & Design > Mechanical Engineering
|Additional Information||ID number: ISIP:000239543600119|
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