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Reduced threshold current in bipolar diode lasers by non-square quantum well growth


Reference:

Kaduki, K. A., Ghiti, A., Batty, W. and Allsopp, D. W. E., 2003. Reduced threshold current in bipolar diode lasers by non-square quantum well growth. Physica Scripta, 67 (1), pp. 68-73.

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Abstract

By device simulation, it is shown that non-square quantum well growth (well shaping) provides a means for reducing the threshold current of bipolar quantum well diode lasers. Calculations of subband structure, optical matrix elements and laser gain are performed based on a 4-band (electron, heavy-hole, light-hole, split-off-hole) Hamiltonian with Burt-Foreman Hermitianization. A non-optimized, compressively strained, InGaAs-AlGaAs (on GaAs) shaped well laser, operating at 0.97 mum is predicted to show improvements in both radiative and non-radiative current performance compared to a device based on an optimal square quantum well of the same well width and emission wavelength. These improvements result from modification of subband structure giving greater subband separation in the shaped well than in the square well.

Details

Item Type Articles
CreatorsKaduki, K. A., Ghiti, A., Batty, W. and Allsopp, D. W. E.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code6034
Additional InformationID number: ISI:000180559100010

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