Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G., 2001. Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers. MRS Internet Journal of Nitride Semiconductor Research, 6 (6), pp. 1-8.
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The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.
|Creators||Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
|Additional Information||ID number: ISI:000168565500001|
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