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Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers


Reference:

Stepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G., 2001. Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers. MRS Internet Journal of Nitride Semiconductor Research, 6 (6), pp. 1-8.

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Abstract

The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of "scatter" in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

Details

Item Type Articles
CreatorsStepanov, S., Wang, W. N., Yavich, B. S., Bougrov, V., Rebane, Y. T. and Shreter, Y. G.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code6132
Additional InformationID number: ISI:000168565500001

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