Simulation of widebandgap multi-quantum well light emitting diodes
Reference:
Oriato, D., Walker, A. B. and Wang, W. N., 2001. Simulation of widebandgap multi-quantum well light emitting diodes. Vlsi Design, 13 (1-4), pp. 295-299.
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Abstract
Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.
Details
| Item Type | Articles |
| Creators | Oriato, D., Walker, A. B. and Wang, W. N. |
| Departments | Faculty of Engineering & Design > Electronic & Electrical Engineering |
| Refereed | Yes |
| Status | Published |
| ID Code | 6143 |
| Additional Information | ID number: ISIP:000173295000045 |
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