Simulation of widebandgap multi-quantum well light emitting diodes
Oriato, D., Walker, A. B. and Wang, W. N., 2001. Simulation of widebandgap multi-quantum well light emitting diodes. Vlsi Design, 13 (1-4), pp. 295-299.
Related documents:This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.
Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.
|Creators||Oriato, D., Walker, A. B. and Wang, W. N.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
|Additional Information||ID number: ISIP:000173295000045|
Actions (login required)