Research

Simulation of widebandgap multi-quantum well light emitting diodes


Reference:

Oriato, D., Walker, A. B. and Wang, W. N., 2001. Simulation of widebandgap multi-quantum well light emitting diodes. VLSI Design, 13 (1-4), pp. 295-299.

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Abstract

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode, A self-consistent solution of Poisson and Schrodinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

Details

Item Type Articles
CreatorsOriato, D., Walker, A. B. and Wang, W. N.
DepartmentsFaculty of Engineering & Design > Electronic & Electrical Engineering
RefereedYes
StatusPublished
ID Code6143
Additional InformationID number: ISIP:000173295000045

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