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Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate


Reference:

Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2007. Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B, 25 Jan-Feb (1), pp. 217-223.

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Details

Item Type Articles
CreatorsMahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G. and Burrows, C. P.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8626
Additional InformationID number: ISI:000244512400041

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