Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate
Reference:
Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2007. Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate. Journal of Vacuum Science & Technology B, 25 Jan-Feb (1), pp. 217-223.
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Details
| Item Type | Articles |
| Creators | Mahapatra, R., Chakraborty, A. K., Poolamai, N., Horsfall, A., Chattopadhyay, S., Wright, N. G., Coleman, K. S., Coleman, P. G. and Burrows, C. P. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8626 |
| Additional Information | ID number: ISI:000244512400041 |
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