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The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si


Reference:

Coleman, P. G., Harding, R. E., Davies, G., Tan, J. and Wong-Leung, J., 2007. The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted Si. Journal of Materials Science-Materials in Electronics, 18 (7), pp. 695-700.

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Details

Item Type Articles
CreatorsColeman, P. G., Harding, R. E., Davies, G., Tan, J. and Wong-Leung, J.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8671
Additional InformationID number: ISI:000246175200004

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