Monovacancy and interstitial migration in ion-implanted silicon
Reference:
Coleman, P. G. and Burrows, C. P., 2007. Monovacancy and interstitial migration in ion-implanted silicon. Physical Review Letters, 98 (26), p. 265502.
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Official URL:
http://link.aps.org/doi/10.1103/PhysRevLett.98.265502
Details
| Item Type | Articles |
| Creators | Coleman, P. G.and Burrows, C. P. |
| DOI | 10.1103/PhysRevLett.98.265502 |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8673 |
| Additional Information | ID number: 000247625100035 |
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