Research

Monovacancy and interstitial migration in ion-implanted silicon


Reference:

Coleman, P. G. and Burrows, C. P., 2007. Monovacancy and interstitial migration in ion-implanted silicon. Physical Review Letters, 98 (26), p. 265502.

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Official URL:

http://link.aps.org/doi/10.1103/PhysRevLett.98.265502

Details

Item Type Articles
CreatorsColeman, P. G.and Burrows, C. P.
DOI10.1103/PhysRevLett.98.265502
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8673
Additional InformationID number: 000247625100035

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