The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient
Reference:
Abdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M. and Knights, A. P., 2007. The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. Journal of Materials Science-Materials in Electronics, 18 (7), pp. 753-757.
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Details
| Item Type | Articles |
| Creators | Abdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M. and Knights, A. P. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8692 |
| Additional Information | ID number: ISI:000246175200014 |
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