Research

The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient


Reference:

Abdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M. and Knights, A. P., 2007. The response of open-volume defects in Si0.92Ge0.08 to annealing in nitrogen or oxygen ambient. Journal of Materials Science-Materials in Electronics, 18 (7), pp. 753-757.

Related documents:

This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.

Details

Item Type Articles
CreatorsAbdulmalik, D. A., Coleman, P. G., Su, H. Z., Haddara, Y. M. and Knights, A. P.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8692
Additional InformationID number: ISI:000246175200014

Export

Actions (login required)

View Item