A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
Mason, R. E. and Coleman, P. G., 2006. A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252 (9), pp. 3228-3230.
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|Creators||Mason, R. E.and Coleman, P. G.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000236021300023|
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