A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
Reference:
Mason, R. E. and Coleman, P. G., 2006. A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252 (9), pp. 3228-3230.
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below.
Details
| Item Type | Articles |
| Creators | Mason, R. E.and Coleman, P. G. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8735 |
| Additional Information | ID number: ISI:000236021300023 |
Export
Actions (login required)
| View Item |
