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A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon


Reference:

Mason, R. E. and Coleman, P. G., 2006. A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252 (9), pp. 3228-3230.

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Details

Item Type Articles
CreatorsMason, R. E.and Coleman, P. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8735
Additional InformationID number: ISI:000236021300023

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