Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate
Reference:
Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2006. Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters, 88 (7).
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below.
Details
| Item Type | Articles |
| Creators | Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G. and Burrows, C. P. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8745 |
| Additional Information | ID number: ISI:000235393700074 |
Export
Actions (login required)
| View Item |
