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Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate


Reference:

Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G. and Burrows, C. P., 2006. Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters, 88 (7).

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Details

Item Type Articles
CreatorsMahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N. G., Chakraborty, A. K., Coleman, K. S., Coleman, P. G. and Burrows, C. P.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8745
Additional InformationID number: ISI:000235393700074

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