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In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry


Reference:

Liu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T., 2006. In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry. Applied Physics Letters, 88 (10).

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Details

Item Type Articles
CreatorsLiu, C., Stepanov, S., Shields, P. A., Gott, A., Wang, W. N., Steimetz, E. and Zettler, J. T.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8749
Additional InformationID number: ISI:000235905800003

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