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Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon


Reference:

Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2006. Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7).

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Details

Item Type Articles
CreatorsHarding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P. and Wong-Leung, J.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8770
Additional InformationID number: ISI:000241248000012

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