Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon
Reference:
Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2006. Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon. Journal of Applied Physics, 100 (7).
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Details
| Item Type | Articles |
| Creators | Harding, R., Davies, G., Tan, J., Coleman, P. G., Burrows, C. P. and Wong-Leung, J. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8770 |
| Additional Information | ID number: ISI:000241248000012 |
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