Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation
Timoshenko, V. Y., Shalygina, O. A., Lisachenko, M. G., Zhigunov, D. M., Teterukov, S. A., Kashkarov, P. K., Kovalev, D., Zacharias, M., Imakita, K. and Fujii, M., 2005. Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation. Physics of the Solid State, 47 (1), pp. 121-124.
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The photoluminescence (PL) spectra and kinetics of erbium-doped layers of silicon nanocrystals dispersed in a silicon dioxide matrix (nc-Si/SiO2) are studied. It was found that optical excitation of nc-Si can be transferred with a high efficiency to Er3+ ions present in the surrounding oxide. The efficiency of energy transfer increases with increasing pumping photon energy and intensity. The process of Er3+ excitation is shown to compete successfully with nonradiative recombination in the nc-Si/SiO2 structures. The Er3+ PL lifetime was found to decrease under intense optical pumping, which implies the establishment of inverse population in the Er3+ system. The results obtained demonstrate the very high potential of erbium-doped nc-Si/SiO2 structures when used as active media for optical amplifiers and light-emitting devices operating at a wavelength of 1.5 mum. (C) 2005 Pleiades Publishing, Inc.
|Creators||Timoshenko, V. Y., Shalygina, O. A., Lisachenko, M. G., Zhigunov, D. M., Teterukov, S. A., Kashkarov, P. K., Kovalev, D., Zacharias, M., Imakita, K. and Fujii, M.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000227051100030|
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