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Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy


Reference:

Shoukri, K. M., Haddara, Y. M., Knights, A. P. and Coleman, P. G., 2005. Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy. Applied Physics Letters, 86 (13).

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Details

Item Type Articles
CreatorsShoukri, K. M., Haddara, Y. M., Knights, A. P. and Coleman, P. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8835
Additional InformationID number: ISI:000228422600041

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