Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy
Reference:
Shoukri, K. M., Haddara, Y. M., Knights, A. P. and Coleman, P. G., 2005. Impact of growth conditions on vacancy-type defects in silicon-germanium structures grown by molecular-beam epitaxy. Applied Physics Letters, 86 (13).
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Details
| Item Type | Articles |
| Creators | Shoukri, K. M., Haddara, Y. M., Knights, A. P. and Coleman, P. G. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8835 |
| Additional Information | ID number: ISI:000228422600041 |
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