Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon
Reference:
Coleman, P. G., Mason, R. E., Van Dyken, M. and Knights, A. P., 2005. Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon. Journal of Physics-Condensed Matter, 17 (22), S2323-S2330.
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Details
| Item Type | Articles |
| Creators | Coleman, P. G., Mason, R. E., Van Dyken, M. and Knights, A. P. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8890 |
| Additional Information | ID number: ISI:000230663100022 |
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