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Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon


Reference:

Coleman, P. G., Mason, R. E., Van Dyken, M. and Knights, A. P., 2005. Direct high-resolution determination of vacancy-type defect profiles in ion-implanted silicon. Journal of Physics-Condensed Matter, 17 (22), S2323-S2330.

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Details

Item Type Articles
CreatorsColeman, P. G., Mason, R. E., Van Dyken, M. and Knights, A. P.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8890
Additional InformationID number: ISI:000230663100022

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