Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC
Reference:
Brauer, G., Anwand, W., Coleman, P. G. and Skorupa, W., 2005. Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC. Vacuum, 78 (2-4), pp. 131-136.
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below.
Details
| Item Type | Articles |
| Creators | Brauer, G., Anwand, W., Coleman, P. G. and Skorupa, W. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8895 |
| Additional Information | ID number: ISI:000229617500005 |
Export
Actions (login required)
| View Item |
