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Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC


Reference:

Brauer, G., Anwand, W., Coleman, P. G. and Skorupa, W., 2005. Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC. Vacuum, 78 (2-4), pp. 131-136.

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Details

Item Type Articles
CreatorsBrauer, G., Anwand, W., Coleman, P. G. and Skorupa, W.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8895
Additional InformationID number: ISI:000229617500005

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