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The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes


Reference:

Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A. and Shreter, Y. G., 2005. The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes. Semiconductors, 39 (7), pp. 795-799.

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Details

Item Type Articles
CreatorsBochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A. and Shreter, Y. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8897
Additional InformationID number: ISI:000230596300014

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