The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes
Reference:
Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A. and Shreter, Y. G., 2005. The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes. Semiconductors, 39 (7), pp. 795-799.
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Details
| Item Type | Articles |
| Creators | Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Y. T., Gorbunov, R. I., Klochkov, A. V., Lavrinovich, D. A. and Shreter, Y. G. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8897 |
| Additional Information | ID number: ISI:000230596300014 |
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