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Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl-2/Ar plasma


Reference:

Zhirnov, E., Stepanov, S., Wang, W. N., Shreter, Y. G., Takhin, D. V. and Bochkareva, N. I., 2004. Influence of cathode material and SiCl4 gas on inductively coupled plasma etching of AlGaN layers with Cl-2/Ar plasma. Journal of Vacuum Science & Technology A, 22 Nov-Dec (6), pp. 2336-2341.

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Details

Item Type Articles
CreatorsZhirnov, E., Stepanov, S., Wang, W. N., Shreter, Y. G., Takhin, D. V. and Bochkareva, N. I.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8912
Additional InformationID number: ISI:000225505900020

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