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Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide


Reference:

Pi, X. D., Coleman, P. G., Harding, R., Davies, G. and Gwilliam, R. M., 2004. Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide. Journal of Applied Physics, 95 (12), pp. 8155-8159.

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Details

Item Type Articles
CreatorsPi, X. D., Coleman, P. G., Harding, R., Davies, G. and Gwilliam, R. M.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8931
Additional InformationID number: ISI:000221843400093

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