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Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure


Reference:

Hartmann, T., Ye, S., Klar, P. J., Heimbrodt, W., Lampalzer, M., Stolz, W., Kurz, T., Loidl, A., von Nidda, H. A. K., Wolverson, D., Davies, J. J. and Overhof, H., 2004. Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure. Physical Review B, 70 (23), 233201.

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Official URL:

http://link.aps.org/doi/10.1103/PhysRevB.70.233201

Details

Item Type Articles
CreatorsHartmann, T., Ye, S., Klar, P. J., Heimbrodt, W., Lampalzer, M., Stolz, W., Kurz, T., Loidl, A., von Nidda, H. A. K., Wolverson, D., Davies, J. J. and Overhof, H.
DOI10.1103/PhysRevB.70.233201
Uncontrolled Keywordssemiconductor doping, manganese compounds, iii-v semiconductors, valence bands, ferromagnetic materials, gallium arsenide, magnetic semiconductors, magnetoelectronics, paramagnetic materials, exchange interactions (electron), antiferromagnetic materials
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code8959
Additional InformationID number: ISI:000226112100007

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