Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure
Reference:
Hartmann, T., Ye, S., Klar, P. J., Heimbrodt, W., Lampalzer, M., Stolz, W., Kurz, T., Loidl, A., von Nidda, H. A. K., Wolverson, D., Davies, J. J. and Overhof, H., 2004. Tuning of the average p-d exchange in (Ga,Mn)As by modification of the Mn electronic structure. Physical Review B, 70 (23), 233201.
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Official URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.233201
Details
| Item Type | Articles |
| Creators | Hartmann, T., Ye, S., Klar, P. J., Heimbrodt, W., Lampalzer, M., Stolz, W., Kurz, T., Loidl, A., von Nidda, H. A. K., Wolverson, D., Davies, J. J. and Overhof, H. |
| DOI | 10.1103/PhysRevB.70.233201 |
| Uncontrolled Keywords | semiconductor doping, manganese compounds, iii-v semiconductors, valence bands, ferromagnetic materials, gallium arsenide, magnetic semiconductors, magnetoelectronics, paramagnetic materials, exchange interactions (electron), antiferromagnetic materials |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 8959 |
| Additional Information | ID number: ISI:000226112100007 |
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