Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices
Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R. and Wang, W. N., 2003. Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices. Applied Physics Letters, 83 (18), pp. 3677-3679.
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The mechanisms responsible for the transparency of Ni/Au and Ni/Au/ZnO on p-GaN has been investigated. It was found that the optical transmission of Ni/Au contacts is dominated by the film thickness and morphology. A change in film thickness, induced by thermal annealing, results in a more transparent contact material. In addition a ZnO film was used as an antireflection layer on top of a Ni/Au contact. The Ni/Au/ZnO film was found to have an increased light transmission of 15% compared with an annealed Ni/Au contact. The maximum optical transmission measured through the Ni/Au/ZnO contact was 90%.
|Creators||Tseng, C. L., Youh, M. J., Moore, G. P., Hopkins, M. A., Stevens, R. and Wang, W. N.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
|Research Centres||Centre for Advanced Sensor Technologies (CAST)|
|Additional Information||ID number: ISI:000186256300011|
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