Research

Anisotropy of optical absorption in birefringent porous silicon


Reference:

Timoshenko, V. Y., Osminkina, L. A., Efimova, A. I., Golovan, L. A., Kashkarov, P. K., Kovalev, D., Kunzner, N., Gross, E., Diener, J. and Koch, F., 2003. Anisotropy of optical absorption in birefringent porous silicon. Physical Review B, 67 (11).

Related documents:

This repository does not currently have the full-text of this item.
You may be able to access a copy if URLs are provided below.

Abstract

Strong polarization-sensitive anisotropy of the optical absorption in the visible and infrared spectral range is observed in porous silicon (PSi) layers formed from bulk (110) Si wafers. It is shown that the anisotropy of the absorption via band-to-band and intraband (Drude-like) electronic transitions is consistent with the strong birefringence of these layers. Both phenomena are described by a model considering the form anisotropy in the (110) PSi layer assembled from nonspherical Si nanocrystals. We show that the anisotropic shape of the nanocrystals results in polarization-sensitive absorption by their surface silicon-hydrogen bonds. This allows an exact assignment of the stretching modes of silicon monohydride in the infrared absorption spectra of the PSi layers.

Details

Item Type Articles
CreatorsTimoshenko, V. Y., Osminkina, L. A., Efimova, A. I., Golovan, L. A., Kashkarov, P. K., Kovalev, D., Kunzner, N., Gross, E., Diener, J. and Koch, F.
DOI10.1103/PhysRevB.67.113405
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9004
Additional InformationID number: ISI:000182035100029

Export

Actions (login required)

View Item