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Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure


Reference:

Shmidt, N. M., Aliev, G., Besul'kin, A. N., Dunaevsky, M. S., Kolmakov, A. G., Loskutov, A. V., Lundin, W. V., Sakharov, A. V., Usikov, A. S., Wolverson, D., Zavarin, E. E. and Yakimov, E. B., 2003. Photoluminescence mapping of GaN epilayers with different degrees of order of mosaic structure. In: Microscopy of Semiconducting Materials 2003. , pp. 333-336. (Institute of Physics Conference Series)

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Item Type Book Sections
CreatorsShmidt, N. M., Aliev, G., Besul'kin, A. N., Dunaevsky, M. S., Kolmakov, A. G., Loskutov, A. V., Lundin, W. V., Sakharov, A. V., Usikov, A. S., Wolverson, D., Zavarin, E. E. and Yakimov, E. B.
DepartmentsFaculty of Science > Physics
StatusPublished
ID Code9009
Additional InformationID number: ISI:000222976100078

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