Oxygen-related vacancy-type defects in ion-implanted silicon
Reference:
Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J., 2003. Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics-Condensed Matter, 15 (39), S2825-S2833.
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Details
| Item Type | Articles |
| Creators | Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 9022 |
| Additional Information | ID number: ISI:000186283200008 |
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