Research

Oxygen-related vacancy-type defects in ion-implanted silicon


Reference:

Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J., 2003. Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics-Condensed Matter, 15 (39), S2825-S2833.

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Details

Item Type Articles
CreatorsPi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9022
Additional InformationID number: ISI:000186283200008

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