Oxygen-related vacancy-type defects in ion-implanted silicon
Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J., 2003. Oxygen-related vacancy-type defects in ion-implanted silicon. Journal of Physics-Condensed Matter, 15 (39), S2825-S2833.
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|Creators||Pi, X. D., Burrows, C. P., Coleman, P. G., Gwilliam, R. M. and Sealy, B. J.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000186283200008|
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