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Study of defects in ion-implanted silicon using photoluminescence and positron annihilation


Reference:

Harding, R., Davies, G., Coleman, P. G., Burrows, C. P. and Wong-Leung, J., 2003. Study of defects in ion-implanted silicon using photoluminescence and positron annihilation. Physica B Condensed Matter, 340, pp. 738-742.

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Details

Item Type Articles
CreatorsHarding, R., Davies, G., Coleman, P. G., Burrows, C. P. and Wong-Leung, J.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9051
Additional InformationID number: ISI:000188300200153

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