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Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si


Reference:

Gwilliam, R. M., Knights, A. P., Burrows, C. P. and Coleman, P. G., 2002. Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si. Journal of Vacuum Science & Technology B, 20 Jan-Feb (1), pp. 427-430.

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Details

Item Type Articles
CreatorsGwilliam, R. M., Knights, A. P., Burrows, C. P. and Coleman, P. G.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9155
Additional InformationID number: ISI:000173985500080

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