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Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon


Reference:

Coleman, P. G., Burrows, C. P. and Knights, A. P., 2002. Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon. Applied Physics Letters, 80 (6), pp. 947-949.

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Details

Item Type Articles
CreatorsColeman, P. G., Burrows, C. P. and Knights, A. P.
DepartmentsFaculty of Science > Physics
RefereedYes
StatusPublished
ID Code9166
Additional InformationID number: ISI:000173612900015

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