Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon
Reference:
Coleman, P. G., Burrows, C. P. and Knights, A. P., 2002. Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon. Applied Physics Letters, 80 (6), pp. 947-949.
Related documents:
This repository does not currently have the full-text of this item.You may be able to access a copy if URLs are provided below.
Details
| Item Type | Articles |
| Creators | Coleman, P. G., Burrows, C. P. and Knights, A. P. |
| Departments | Faculty of Science > Physics |
| Refereed | Yes |
| Status | Published |
| ID Code | 9166 |
| Additional Information | ID number: ISI:000173612900015 |
Export
Actions (login required)
| View Item |
